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By Mott N.F.

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The rectifying contacts were formed by liftoff of e-beam-evaporated Pt/Ti/Au (diameter 60–1100 mm). 25. 3 kV. The onresistance of the AlGaN diodes was higher than for pure GaN, owing to higher ohmic contract resistance. 5 MW cmÀ2. The breakdown voltage, VB, can be affected by changing the gap between the Schottky barrier and the ohmic contact by employing p-guard rings and extending the Schottky contact edge over an oxide layer for edge termination. 75N rectifiers, with breakdown still occurring at the edges of the Schottky contact [23–25].

Note that a correction to the v(y) function appearing in the probability calculations in the original paper has been corrected in a later publication by j31 j 1 Metal Contacts to GaN and Processing 32 Burgess et al. ) The process is of prominence in field emission from metal into vacuum where there is electric field, in metal oxide structures where the oxide band is triangular-like owing to applied bias, and metal–semiconductor cases where the semiconductor is heavily doped. The metal oxide case is very pertinent to nonvolatile memories with gates buried in SiO2.

See Ref. [33] for a full treatment. 26 Schematic representation of alloyed ohmic contacts to a semiconductor where the filled region below the metallization indicates the altered semiconductor owing to an interaction between the contact material and the semiconductor. Here Rsshr and Rcshr indicate the sheet resistance of the unaltered semiconductor and the sheet resistance of the altered semiconductor below the contact metal after annealing. with various spacing between them. 26. The total resistance is given by RT ¼ 2RC þ lRsshr ; Z ð1:74Þ where the first term represents twice the contact resistance Rc because the resistance is measured between two identical contacts, whereas the second term is because of the semiconductor resistance that depends on the contact separation or the gap between contacts.

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An Outline of Wave Mechanics by Mott N.F.

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